Examination element and examination container

ABSTRACT

The present invention relates to an examination element that includes an antenna; a hygroscopic portion that absorbs a specimen; a reagent portion that, reacts with the specimen; and a chip including a semiconductor device capable of wireless communication and a photo sensor that detects a change in a color of the reagent portion. A change in the reagent portion is detected by the photo sensor, the detected data is stored in the semiconductor device capable of wireless communication, and the data is transmitted to an external database.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a urinalysis system including asemiconductor device capable of wireless communication, a photo sensor,or the like, and a urinalysis method using the urinalysis system.

2. Description of the Related Art

A urinalysis mainly tests for kidney diseases, but also tests forvarious other diseases. Conventionally, a method of preparing a papercup for urinalysis and dipping a test paper into collected urine tomanually obtain a reaction appearing on the test paper is employed forurinalysis.

With urinalysis test paper, the following can be tested: protein inurine, urine sugar, ketone body, bilirubin, urobilinogen, occult blood,nitrite, pH, specific gravity of urine and the like. In recent years,with the development of information description, advanced networks arebeing built in the medical workplace. However, there is no technique toelectronically connect such test results obtained manually. That is,information of the test results needs to be input to an informationterminal by hand, which has hindered improvement in quickness andefficiency.

As an automation apparatus, an automatic urinalysis apparatus is known,which has a sensor unit that is provided inside a urinalysis toolincluding a waterproof container provided with an examination hole and areagent portion, which seals the examination hole. The sensor unitincludes a light receiving element and a light emitting element foroptically detecting the degree of coloration of the reagent portion (seePatent Document 1: Japanese Published Patent Application No. H 5-18966).

However, with a method of soaking the urinalysis tool in a containercontaining a specimen for a certain amount of time and measuring thedegree of coloration of the reagent portion each time, it takes a longtime to process many specimens. Also, for every specimen, the urinalysistool to which the reagent portion is attached, and the sensor unit needto be taken apart to replace the urinalysis tool with a new one.

SUMMARY OF THE INVENTION

Consequently, an object of the present invention is to automate analysisof a specimen, and to improve quickness and efficiency in medicalpractice.

In addition, the present invention is not limited to medical practice,and another object is to improve quickness and efficiency of testingmeans for testing liquid, and a testing method.

The present invention relates to an examination element or anexamination container that can be used favorably in examining aspecimen, and the main point is that it is provided with functions ofdetecting a change in a reagent portion by a sensor and outputting thesensor output by wireless communication to a computer.

The present invention relates to an examination element that includes anantenna; a hygroscopic portion that absorbs a specimen; a reagentportion that is provided in contact with the hygroscopic portion andreacts with the specimen; a chip including a semiconductor devicecapable of wireless communication and a photo sensor that detects achange in a color of the reagent portion; and a light transmittingprotective film that covers the antenna and the chip. A change in thereagent portion is detected by the photo sensor, the detected data isstored in the semiconductor device capable of wireless communication,and the data is transmitted to an external database.

Also, the present invention relates to an examination element thatincludes a hygroscopic portion that absorbs a specimen; a reagentportion that is provided in contact with the hygroscopic portion andreacts with the specimen; a photo sensor that detects a change in acolor of the reagent portion; a signal processing circuit that reads anoutput from the photo sensor; and a communication circuit that outputsan output of the signal processing circuit to an external device.

Further, the present invention relates to an examination container thatincludes a container and an examination element provided in thecontainer. The examination element includes an antenna, a chip includinga photo sensor and a semiconductor capable of wireless communication, alight transmitting protective film covering the antenna and the chip, areagent portion, and a hygroscopic portion. Also, a change of thereagent portion is detected by the photo sensor, the detected data isstored in the semiconductor device capable of wireless communication,and the data is transmitted to an external database.

Furthermore, the present invention relates to an examination containerthat includes an examination element in a vicinity of a bottom surfaceof a cylindrical body with a bottom that stores a specimen, and theexamination element includes, for example, the following: a hygroscopicportion that absorbs the specimen; a reagent portion that is provided incontact with the hygroscopic portion and reacts with the specimen; aphoto sensor that detects a change in a color of the reagent portion; asignal processing circuit that reads an output of the photo sensor; anda communication circuit that outputs an output of the signal processingcircuit to an external device.

Still further, the present invention relates to an examination containerthat includes an examination element in a vicinity of a bottom surfaceof a cylindrical body with a bottom that stores a specimen, and theexamination element includes the following: a hygroscopic portion thatabsorbs the specimen; a reagent portion that is provided in contact withthe hygroscopic portion and reacts with the specimen; a photo sensorthat detects a change in a color of the reagent portion; a signalprocessing circuit that reads an output of the photo sensor; and acommunication circuit that outputs an output of the signal processingcircuit to an external device. Also, an antenna formed on a bottomsurface or a side surface of the cylindrical body and the examinationelement are connected.

In the present invention, the photo sensor includes a photo diode and anamplifier circuit that amplifies an output current of the photo diode.

In the present invention, the semiconductor device capable of wirelesscommunication includes a memory circuit, and the memory circuit storesthe detected data and the stored data is transmitted to the externaldatabase.

In the present invention, a battery for supplying power is provided.

Also, in the present invention, the battery is an RF battery.

By the present invention, it is possible to speed up a medicalexamination as well as to improve efficiency of medical service.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIGS. 1A and 1B show outlines of the present invention;

FIGS. 2A and 2B are block diagrams each showing an examination elementof the present invention;

FIGS. 3A and 3B are block diagrams each showing an examination elementof the present invention;

FIGS. 4A and 4B are a block diagram and a circuit diagram of a photosensor, respectively;

FIG. 5 is a cross-sectional diagram showing a photo sensor of thepresent invention;

FIG. 6 is a block diagram showing a semiconductor device of the presentinvention capable of wireless communication;

FIGS. 7A and 7B are circuit diagrams each showing a photo sensor of thepresent invention;

FIG. 8 is a circuit diagram showing a photo sensor of the presentinvention;

FIGS. 9A to 9C are diagrams showing a manufacturing process of a photosensor of the present invention;

FIGS. 10A to 10C are diagrams showing a manufacturing process of a photosensor of the present invention;

FIGS. 11A and 11B are diagrams showing a manufacturing process of aphoto sensor of the present invention;

FIG. 12 is a block diagram showing a memory circuit of the presentinvention;

FIG. 13 is a diagram showing an examination system of the presentinvention;

FIG. 14 is a block diagram showing a battery of the present invention;

FIGS. 15A and 15B are diagrams showing circuits included in a battery ofthe present invention;

FIGS. 16A to 16E are top views of circuits included in a battery of thepresent invention;

FIG. 17 is a diagram showing a circuit included in a battery of thepresent invention;

FIG. 18 is a cross-sectional diagram of a battery of the presentinvention;

FIG. 19 is a block diagram showing a circuit included in a battery ofthe present invention; and

FIG. 20 is a circuit diagram included in a battery of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION Embodiment Mode

An embodiment mode of the present invention will hereinafter bedescribed. However, the present invention can be carried out in manydifferent modes, and it is easily understood by those skilled in the artthat modes and details herein disclosed can be modified in various wayswithout departing from the spirit and the scope of the presentinvention. Therefore, the present invention should not be interpreted asbeing limited to the description of the embodiment mode to be givenbelow.

Note that in all drawings for describing the embodiment mode, the samereference numerals are used for the same portions or the portions havingsimilar functions, and repeated description thereof is omitted.

Note that a semiconductor device in this specification refers to devicesin general that can function by utilizing a semiconductorcharacteristic.

This embodiment will be described with reference to FIGS. 1A to 20.

An examination element 101 for examination (see FIG. 1A) is attached toan inside of a container 111 for urinalysis, for example, a cylindricalobject with a bottom, specifically, a paper cup. The examination element101 includes a substrate 102 made of a resin such as polyimide, a chip105 provided over the substrate 102, an antenna 103 made of a conductorsuch as copper, a light emitting element (light emitting diode (LED))104 provided over the substrate, a light transmitting protective film107 provided over the chip 105, a reagent portion 108 provided over theprotective film 107, and a hygroscopic portion 109 provided over thereagent portion 108 (see FIG. 1B). Note that although in FIG. 1B, alight transmitting passivation film 106 for protecting the chip 105 isprovided, the passivation film 106 does not have to be formed since theprotective film 107 is provided.

Note that a hygroscopic material used for the hygroscopic portion 109may be any material that absorbs a specimen, in this embodiment mode, aliquid. A resin or a porous body can be given as examples.

An examination element for examination is attached to an inside(preferably, the bottom) of a paper cup for urinalysis that is usedconventionally. A test paper that is provided over a top surface of theexamination element reacts to urine (specimen) that is collected in thepaper cup, the reaction is read by a photo sensor mounted to theexamination element, and data of a test result is sent to asemiconductor device capable of wireless communication. Then, thesemiconductor device capable of wireless communication, which is mountedto the examination element, digitizes information and temporarily storesthe information in a memory incorporated in the semiconductor devicecapable of wireless communication. Information that is read by a readeris temporarily stored in the reader and then transmitted to an automaticurinalysis apparatus (packet communication). Then, the information goesthorough an analysis apparatus and is given an analysis result, which isadded to a database of each patient.

In recent years, test papers are sold by various manufacturers. However,because their judgment values differ, the urinalysis standardizationcommittee of Japanese Committee for Clinical Laboratory Standards(JCCLS) is working on standardization of sugar, protein, and occultblood of urinalysis paper. The present examination apparatus preferablyis an examination apparatus using the above standards.

Further, in addition to urinalysis, by changing sensitivity or the likeof the test paper, the reagent portion, or the photo sensor, it ispossible to examine and obtain data on various liquids. For example, theexamination apparatus can be applied various fields such as blood testsand water quality tests, and examination can be improved in quicknessand efficiency.

In the chip 105, a photo sensor (photoelectric conversion device) 202 asa sensor, a semiconductor device 201 capable of wireless communication,and a light emitting diode (LED) 203 as a light source (see FIG. 2A) areprovided. If necessary, an RF (Radio Frequency) battery 204 may beplaced as means for supplying power to each element (see FIG. 2B). Notethat only one of the LED 104 and the LED 203 may be provided. However,the LED 104 and the LED 203 do not have to be provided as describedbelow.

In FIG. 2A, the photo sensor 202, the semiconductor device 201 capableof wireless communication, and the LED 203, are placed over the sameflat surface, and in FIG. 2B, the photo sensor 202, the semiconductordevice 201 capable of wireless communication, the LED 203, and thebattery 204 are placed over the same flat surface. However, the chip 105may be formed by forming each of them over separate substrates and thenattaching them together. FIG. 3A shows the chip 105 obtained byattaching together the semiconductor device 201 capable of wirelesscommunication, the photo sensor 202, and the LED 203, and FIG. 3B showsthe chip 105 obtained by attaching together the semiconductor device 201capable of wireless communication, the photo sensor 202, the LED 203,and the battery 204. An order of stacking the semiconductor device 201capable of wireless communication, the photo sensor 202, the LED 203,and the battery 204 does not have to be that shown in FIG. 3A to FIG.3B. A through-hole is provided in each substrate and the substrate iselectrically connected to each other with a conductive material. Inaddition, the LED 203 may be surface-emitting.

Further, the LED 104 and the LED 203 do not have to be provided ifsufficient light that can be detected by the photo sensor 202 isobtained. Alternatively, a bottom surface or the entire surface of thecontainer 111 may be formed of a light transmitting material, anddetection by the photo sensor 202 may be performed by taking in lightfrom a light source provided outside of the examination element 101through a region of the container 111 formed of the light transmittingmaterial.

The photo sensor 202 is described with reference to FIGS. 4A to 5, andFIGS. 7A to 11B. The photo sensor 202 of this embodiment mode includes aphoto diode 303 and an amplifier circuit 301 that amplifies an outputcurrent (light current) of the photo diode 303. FIG. 4A and FIG. 4B showa top view and a circuit diagram of the photo sensor 202, respectively.Note that a circuit 307 may be additionally provided as necessary. Thecircuit 307 may be for example a processing circuit that processes andconverts an output current into a signal that is sent to thesemiconductor device 201 capable of wireless communication, a signalprocessing circuit that reads an output from the photo diode 303, acommunication circuit that outputs an output from the signal processingcircuit to an external device, and the like.

In this embodiment mode, a current mirror circuit is used as theamplifier circuit 301, and as a basic structure thereof, a thin filmtransistor (TFT) 304 and a TFT 305 are provided on a reference side andon an amplification side, respectively.

In FIG. 4B, a gate electrode of the TFT 304 included in the currentmirror circuit 301 is electrically connected to a gate electrode of theother TFT 305 included in the current mirror circuit 301. Further, thegate electrode of the TFT 304 is also electrically connected to a drainelectrode (also called a “drain terminal”) that is one of a sourceelectrode or drain electrode of the TFT 304.

The drain terminal of the TFT 304 is electrically connected to the photodiode 303, a drain terminal of the TFT 305, and a high potential powersupply V_(DD).

A source electrode that is the other of the source electrode or drainelectrode of the TFT 304 is electrically connected to a low potentialpower supply V_(SS) and a source terminal of the TFT 305.

In FIG. 4B, the gate electrode of the TFT 305 included in the currentmirror circuit 301 is electrically connected to the gate electrode andthe drain terminal of the TFT 304.

Also, a common potential is applied to the gate electrodes of the TFT304 and the TFT 305 since they are connected to each other.

FIG. 4B shows an example of the current mirror circuit including twoTFTs. At this time, in a case where the TFT 304 and the TFT 305 have thesame characteristic, the ratio of a reference current and an outputcurrent is 1:1.

Circuit structures for making an output value increase by n folds isshown in FIGS. 7A and 7B. The circuit structure of FIG. 7A correspondsto that in FIG. 4B with n number of TFT 305. As shown in FIG. 7A, bymaking the ratio of the n-channel TFT 304 and the n-channel TFT 305 be1:n, the output value can increase by n folds. This is because of thesame principle as increasing a channel width W of the TFT and making anallowable amount of current that can be fed to the TFT increase by nfolds.

For example, in a case of designing the output value to increase by 100folds, a target current can be obtained by connecting one n-channel TFT304 and 100 n-channel TFTs 305 in parallel.

A detailed circuit structure of a circuit 318 i (a circuit 318 a, acircuit 318 b, or the like) in FIG. 7A is shown in FIG. 7B.

The circuit structure in FIG. 7B is based on the circuit structures inFIGS. 4B and 7A, and the same elements are denoted by the same referencenumerals. That is, a gate electrode of a TFT 305 i is electricallyconnected to a terminal 319 i, and a drain terminal of the TFT 305 ii iselectrically connected to a terminal 320 i. Also, a source terminal ofthe TFT 305 i is electrically connected to a terminal 321 i.

Note that in order to describe the circuit 318 a, the circuit 318 b, andthe like in FIG. 7A, the circuit 318 i, which is one of them, is shownin FIG. 7B. Since the circuit structure of the circuit 318 i is based onthose of FIGS. 4B and 7A, reference numerals in FIG. 7B with an “i” atthe end correspond to those with reference numerals in FIG. 4B withoutthe “i.” That is, for example, the TFT 305 in FIG. 4B is the same TFT asthe TFT 305 i in FIG. 7B.

Therefore, in FIG. 7A, the n-channel TFT 305 includes n number ofn-channel TFTs 305 a, 305 b, 305 i, and the like. Accordingly, a currentthat flows through the TFT 304 is amplified by n folds and output.

Note that in FIGS. 7A and 7B, when the same elements as those in FIG. 4Bare referred to, the same reference numerals are used.

Further, although in FIG. 4B, the current mirror circuit 301 is shown asan equivalent circuit using an n-channel TFT, a p-channel TFT may beused instead of the n-channel TFT.

In a case of forming the amplifier circuit with a p-channel TFT, theamplifier circuit becomes the equivalent circuit shown in FIG. 8. Asshown in FIG. 8, a current mirror circuit 333 includes p-channel TFTs331 and 332. Note that elements in FIG. 4B that are the same as those inFIG. 8 are shown by the same reference numerals.

FIG. 5 shows a cross-sectional diagram of a circuit including thecurrent mirror circuit 301 including the TFTs 304 and 305, and the photodiode 303 in FIG. 4B.

FIG. 5 shows a substrate 210, a base insulating film 212, and a gateinsulating film 213.

In addition, a connection electrode 285, a terminal electrode 281,source or drain electrodes 282 of a TFT 304, and source or drainelectrodes 283 of a TFT 305 each have a stacked-layer structure of arefractory metal film and a low resistance metal film (an aluminumalloy, pure aluminum, or the like). Here, the source or drain electrodes282 and 283 are each formed to have a three-layer structure where atitanium film (Ti film), an aluminum film (Al film), and a Ti film aresequentially stacked.

Each of the connection electrode 285, the terminal electrode 281, thesource or drain electrodes 282 of the TFT 304, and the source or drainelectrodes 283 of the TFT 305 has a stacked-layer structure of arefractory metal film and a low resistance metal film.

As such a low resistance metal film, an aluminum alloy, pure aluminum,or the like can be given. In this embodiment mode, a three-layerstructure where a titanium film (Ti film), an aluminum film (Al film),and a Ti film are sequentially stacked is employed as such astacked-layer structure of a refractory metal film and a low-resistancemetal film.

Instead of the stacked-layer structure of the refractory metal film andthe low resistance metal film, the connection electrode 285, theterminal electrode 281, the source or drain electrodes 282 of the TFT304, and the source or drain electrodes 283 of the TFT 305 can also beeach formed of a single-layer conductive film. As such a single-layerconductive film, a single-layer film formed of an element of titanium(Ti), tungsten (W), tantalum (Ta), molybdenum (Mo), neodymium (Nd),cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh),palladium (Pd), osmium (Os), iridium (Ir), and platinum (Pt) or an alloymaterial or a compound material containing the element as its maincomponent; or a single-layer film formed of a nitride thereof, forexample, titanium nitride, tungsten nitride, tantalum nitride, ormolybdenum nitride can be used.

Also, in FIG. 5, although an example is shown in which the n-channelTFTs 304 and 305 are top gate TFTs with a structure including onechannel forming region (called a “single gate structure” in thisspecification), the n-channel TFTs 304 and 305 may have a structureincluding a plurality of channel forming regions to reduce variations inon-current values.

In order to reduce the value of off-current, a lightly doped drain (LDD)region may also be provided in the n-channel TFTs 304 and 305. An LDDregion is a region to which an impurity element is added at lowconcentration between a channel formation region and a source or drainregion that is formed by being added with an impurity element at highconcentration. By providing the LDD region, there is an effect ofrelieving an electric field in the vicinity of the drain region toprevent deterioration due to hot carrier injection.

In addition, in order to prevent deterioration of the value of anon-current due to hot carriers, the n-channel TFTs 304 and 305 mayemploy a structure in which an LDD region and a gate electrode areplaced so as to be overlapped with each other with a gate insulatingfilm therebetween(referred to as a “GOLD (Gate-drain Overlapped LDD)structure” in this specification).

In a case of where a GOLD structure is employed, the effect of reducingan electric field in the vicinity of a drain region and to preventdeterioration due to hot carrier injection is more enhanced than in acase where an LDD region and a gate electrode are not overlapped witheach other. By employing of such a GOLD structure, electric fieldintensity in the vicinity of a drain region is relieved and hot carrierinjection is prevented; therefore, it is effective for preventing adeterioration phenomenon.

The TFTs 304 and 305 that form the current mirror circuit 301 may alsobe a bottom gate TFT, for example, an inversely staggered TFT as well asa top gate TFT.

In addition, a wiring 215 is connected to the drain wiring (alsoreferred to as a “drain electrode”) or the source wiring (also referredto as a “source electrode”) of the TF 304. Also, an insulating film 216,an insulating film 217, and a connection electrode 285 are included.Note that, as the insulating film 217, a silicon oxide film that isformed by a CVD method is preferably used. When the insulating film 217is formed of a silicon oxide film that is formed by a CVD method, fixingintensity is improved.

In addition, a terminal electrode 250 is formed in the same process asthe wiring 215, and the terminal electrode 281 is formed in the sameprocess as the connection electrode 285.

Moreover, a terminal electrode 221 is mounted on an electrode 261 of asubstrate 260 with a solder 264. A terminal electrode 222 is formed inthe same process as the terminal electrode 221, and is mounted on anelectrode 262 of the substrate 260 with a solder 263.

A process of manufacturing a semiconductor device containing the currentmirror circuit 301 that includes the photo diode 303 and the TFTs 304and 305 is described below with reference to FIG. 5 and FIGS. 9A to 11B.

First, an element is formed over a substrate (the first substrate 210).Here, as the substrate 210, an alkali-free glass substrate is used,which is one type of glass substrate and is commercially available.

Next, a silicon oxide film containing nitrogen (100 nm thick) to be abase insulating film 212 is formed by a plasma CVD method, and further,without being exposed to the atmosphere, a semiconductor film, forexample, an amorphous silicon film containing hydrogen (54 nm thick) isformed and stacked thereover. In addition, the base insulating film 212may also be formed using the stack of a silicon oxide film, a siliconnitride film, and a silicon oxide film containing nitrogen. For example,as the base insulating film 212, a film may also be formed where asilicon nitride film containing oxygen with thickness of 50 nm, andfurther, a silicon oxide film containing nitrogen with a thickness of100 nm are stacked. Note that the silicon oxide film containing nitrogenor the silicon nitride film serves as a blocking layer that preventsdiffusion of an impurity such as an alkaline metal from the glasssubstrate.

Then, the amorphous silicon film is crystallized by a solid phase growthmethod, a laser crystallization method, a crystallization method using acatalytic metal, or the like to form a semiconductor film having acrystal structure (a crystalline semiconductor film), for example, apolycrystalline silicon film. Here, a polycrystalline silicon film isobtained by a crystallization method using a catalytic element. Asolution containing 10 ppm of nickel in weight conversion is added tothe surface of the amorphous silicon film using a spinner. Note that amethod in which a nickel element is diffused over the entire surface bya sputtering method may also be used instead of the addition method witha spinner. Then, a heating treatment is performed and crystallization isperformed to form a semiconductor film having a crystal structure (here,a polycrystalline silicon film). Here, after the heating treatment (at500 □C for an hour), a heating treatment for crystallization (at 550° C.for 4 hours) is performed to obtain a polycrystalline silicon film.

Subsequently, an oxide film over the surface of the polycrystallinesilicon film is removed with a dilute hydrofluoric acid or the like.Thereafter, laser beam irradiation for increasing a degree ofcrystallization and repairing a defect left in the crystal grain isperformed.

Note that the following laser irradiation method may also be employed ina case where a crystalline semiconductor film is obtained bycrystallization of an amorphous silicon film by a laser crystallizationmethod or in a case where laser irradiation is performed to repair adefect left in the crystal grain after a semiconductor film having acrystal structure is obtained.

A continuous wave laser beam (CW laser beam) or a pulsed wave laser beam(pulsed laser beam) can be used for the laser irradiation. As the laserbeam that can be used here, a beam emitted from one or more of a gaslaser such as an Ar laser, a Kr laser, or an excimer laser; a laserusing, as a medium, single crystalline YAG, YVO₄, forsterite (Mg₂SiO₄),YAlO₃, or GdVO₄ or polycrystalline (ceramic) YAG, Y₂O₃, YVO₄, YAlO₃, orGdVO₄ doped with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as adopant; a glass laser; a ruby laser; an alexandrite laser; a Ti:sapphirelaser; a copper vapor laser; and a gold vapor laser can be used. Acrystal with a large grain size can be obtained by irradiation of alaser beam having a fundamental wave of such lasers or one of second,third, and fourth harmonic of the fundamental wave. For example, thesecond harmonic (532 nm) or the third harmonic (355 nm) of an Nd:YVO₄laser (fundamental wave of 1064 nm) can be used. In this case, an energydensity of approximately 0.01 to 100 MW/cm² (preferably, 0.1 to 10MW/cm²) is required for a laser. The scanning speed is set atapproximately 10 to 2000 cm/sec for the irradiation.

Note that a laser using, as a medium, single crystalline YAG, YVO₄,forsterite (Mg₂SiO₄), YAlO₃, or GdVO₄ or polycrystalline (ceramic) YAG,Y₂O₃, YVO₄, YAlO₃, or GdVO₄ doped with one or more of Nd, Yb, Cr, Ti,Ho, Er, Tm, and Ta as a dopant; an Ar ion laser; a Kr ion laser; or aTi:sapphire laser can be continuously oscillated. Further, pulseoscillation thereof can be performed with a repetition rate of 10 MHz ormore by performing a Q switch operation or mode synchronization. When alaser beam is oscillated with a repetition rate of 10 MHz or more, asemiconductor film is irradiated with a subsequent pulse while thesemiconductor film is melted by the laser and solidified. Therefore,unlike in a case of using a pulsed laser with a low repetition rate, asolid-liquid interface can be continuously moved in the semiconductorfilm so that crystal grains that continuously grow toward a scanningdirection can be obtained.

When ceramic (polycrystal) is used as a medium, the medium can be formedto have a free shape in a short time at low cost. When a single crystalis used, a columnar medium with several mm in diameter and several tensof mm in length is usually used. In the case of using the ceramic, amedium bigger than the case of using the single crystal can be formed.

A concentration of a dopant such as Nd or Yb in a medium, which directlycontributes to light emission, cannot be changed largely in both casesof the single crystal and the polycrystal; therefore, there is alimitation to some extent in improving output of a laser by increase inconcentration. However, in the case of the ceramics, the size of themedium can be significantly increased as compared with the case of thesingle crystal; therefore, the output is improved drastically.

Further, in the case of the ceramic, a medium with a parallel six-hedronshape or a rectangular shape can be easily formed. In a case of using amedium having such a shape, when oscillated light is made to zigzaginside the medium, a long path of the oscillated light can be obtained.Therefore, amplitude is increased and a laser beam can be oscillated athigh output. Moreover, since a cross-sectional shape of a laser beam,which is emitted from a medium having such a shape, is a quadrangularshape, as compared with a laser beam with a circular shape, the laserbeam with the quadrangular shape in cross section has an advantage to beshaped into a linear beam. By shaping a laser beam emitted in the abovemanner using an optical system, a linear beam with 1 mm or less inlength of a short side and several mm to several m in length of a longside can be easily obtained. Further, when a medium is evenly irradiatedwith excited light, a linear beam is emitted with an even energydistribution in a long side direction.

When a semiconductor film is irradiated with such a linear beam, anentire surface of the semiconductor film can be annealed evenly. Wheneven annealing is required from one end to the other end of the linearbeam, a devisal of disposing slits on both ends of the linear beam, toshield an attenuated portion of energy from light, or the like isrequired.

In a case where the laser irradiation is performed in the atmosphere oran oxygen atmosphere, an oxide film is formed over the surface by laserbeam irradiation.

Next, in addition to the oxide film formed by the laser beamirradiation, a barrier layer formed of an oxide film having a thicknessof 1 to 5 nm in total is formed by treatment of the surface with ozonewater for 120 seconds. The barrier layer is formed in order to remove acatalyst element, which is added for crystallization, for example,nickel (Ni) from the film. Although the barrier layer is formed usingozone water here, a barrier layer may also be formed by deposition of anoxide film having a thickness of approximately 1 to 10 nm using a methodfor oxidizing a surface of a semiconductor film having a crystalstructure by UV-ray irradiation under an oxygen atmosphere; a method foroxidizing a surface of a semiconductor film having a crystal structureby oxygen plasma treatment; a plasma CVD method; a sputtering method; anevaporation method; or the like. In addition, before the barrier layeris formed, the oxide film formed by laser beam irradiation may also beremoved.

Then, over the barrier layer, an amorphous silicon film containing argonis formed to have a thickness of 10 to 400 nm, for example 100 nm here,by a sputtering method to serve as a gettering site. Here, the amorphoussilicon film containing argon is formed under an atmosphere containingargon using a silicon target. When a plasma CVD method is used to formthe amorphous silicon film containing argon, the deposition condition isas follows: a flow ratio of monosilane to argon (SiH₄:Ar) is set at1:99; a deposition pressure, 6.665 Pa; a RF power density, 0.087 W/cm²;and a deposition temperature, 350° C.

Thereafter, a furnace heated at 650° C. is used for heat treatment forthree minutes to remove a catalyst element (gettering). By thistreatment, the catalyst element concentration in the semiconductor filmhaving a crystal structure is reduced. A lamp annealing apparatus mayalso be used instead of the furnace.

Subsequently, the amorphous silicon film containing an argon element,which is a gettering site, is selectively removed with the barrier layeras an etching stopper, and then, the barrier layer is selectivelyremoved with dilute hydrofluoric acid. Note that there is a tendencythat nickel is likely to move to a region with a high oxygenconcentration in gettering; thus, it is desirable that the barrier layermade of the oxide film be removed after gettering.

Note that, when crystallization of a semiconductor film using acatalytic element is not performed, the above steps such as theformation of the barrier layer, the formation of the gettering site, theheat treatment for gettering, the removal of the gettering site, and theremoval of the barrier layer are not necessary.

Next, after a thin oxide film is formed with ozone water over thesurface of the obtained semiconductor film having a crystal structure(for example, a crystalline silicon film), a mask made of a resist isformed using a first photomask. Then, an etching treatment is performedto obtain a desired shape, thereby forming semiconductor films 231 and232 separated in island shapes (referred to as an “island-shapedsemiconductor region” in this specification) (see FIG. 9A). After theisland-shaped semiconductor regions are formed, the mask made of resistis removed.

Then, if necessary, doping of an impurity element (boron or phosphorus)in a minute amount is performed to control the threshold value of a TFT.Here, an ion doping method is used, in which diborane (B₂H₆) is notseparated by mass but excited by plasma.

Subsequently, the oxide film is removed with an etchant containinghydrofluoric acid, and at the same time, the surfaces of theisland-shaped semiconductor regions 231 and 232 are washed. Thereafter,an insulating film containing silicon as its main component, which is toserve as a gate insulating film 213, is formed. Here, a silicon oxidefilm containing nitrogen (composition ratio: Si=32%, O=59%, N=7%, andH=2%) is formed to have a thickness of 115 nm by a plasma CVD method.

Next, after a metal film is formed over the gate insulating film 213, agate electrode 234 and a gate electrode 235, a wiring 214 and a wiring215, and a terminal electrode 250 are formed (see FIG. 9B).

In addition, as the gate electrodes 234 and 235, the wirings 214 and215, and the terminal electrode 250, a single-layer film formed of anelement selected from titanium (Ti), tungsten (W), tantalum (Ta),molybdenum (Mo), neodymium (Nd), cobalt (Co), zirconium (Zr), zinc (Zn),ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir),platinum (Pt), aluminum (Al), gold (Au), silver (Ag), and copper (Cu) oran alloy material or a compound material containing the element as itsmain component. Alternatively, a single-layer film formed of a nitridethereof, for example, titanium nitride, tungsten nitride, tantalumnitride, or molybdenum nitride can be used.

Moreover, a stacked-layer film may also be used instead of the abovesingle-layer film. For example, as the gate electrode 234 and the gateelectrode 235, the wiring 214 and the wiring 215, and the terminalelectrode 250, a film may also be used where tantalum nitride (TaN) andtungsten (W) with thicknesses of 30 nm and 370 nm, respectively, arestacked.

Next, an impurity imparting one conductivity type is introduced to theisland-shaped semiconductor region 231 and the island-shapedsemiconductor region 232 to form source or drain regions 237 of a TFT305 and source or drain regions 238 of a TFT 304. An n-channel TFT isformed in this embodiment mode; therefore, an n-type impurity, forexample, phosphorus (P) or arsenic (As) is introduced to theisland-shaped semiconductor region 231 and the island-shapedsemiconductor region 232 (see FIG. 9C).

Then, after a first interlayer insulating film including a silicon oxidefilm (not shown) is formed to have a thickness of 50 nm by a CVD method,a step of an activation treatment of an impurity element added to eachisland-shaped semiconductor region is carried out. This activation stepis performed by a rapid thermal annealing method (RTA method) using alamp light source, an irradiation method of a YAG laser or an excimerlaser from the back side, a heat treatment using a furnace, or a methodthat is combined with any one of the above methods.

Subsequently, a second interlayer insulating film 216 including asilicon nitride film containing hydrogen and oxygen is formed, forexample, with a thickness of 10 nm.

Next, a third interlayer insulating film 217 formed of an insulatormaterial is formed over the second interlayer insulating film 216 (seeFIG. 10A). An insulating film obtained by a CVD method can be used forthe third interlayer insulating film 217. In this embodiment mode, inorder to improve adhesiveness, a silicon oxide film containing nitrogenis formed with a thickness of 900 nm as the third interlayer insulatingfilm 217.

Then, a heat treatment (heat treatment at a temperature of 300 to 550°C. for 1 to 12 hours, for example, at 410° C. for one hour in a nitrogenatmosphere) is performed to hydrogenate the island-shaped semiconductorfilms. This step is performed to terminate a dangling bond in theisland-shaped semiconductor films by hydrogen contained in the secondinterlayer insulating film 216. The island-shaped semiconductor filmscan be hydrogenated regardless of whether the gate insulating film 213is formed.

In addition, as the third interlayer insulating film 217, an insulatingfilm using siloxane and a stacked structure thereof can also be used.Siloxane is composed of a skeleton structure of a bond of silicon (Si)and oxygen (O). For a substituent, a compound containing at leasthydrogen (for example, an alkyl group or an aromatic hydrocarbon) isused. Fluorine may also be used for the substituent. Moreover, acompound containing at least hydrogen and fluorine may also be used forthe substituent.

When an insulating film using siloxane and a stacked structure thereofare used as the third interlayer insulating film 217, after the secondinterlayer insulating film 216 is formed, a heat treatment forhydrogenating the island-shaped semiconductor films can be performed,and then, the third interlayer insulating film 217 can also be formed.

Next, a mask made of a resist is formed, and the first interlayerinsulating film, the second interlayer insulating film 216, and thethird interlayer insulating film 217, or the gate insulating film 213are selectively etched to form contact holes. Then, the mask made of aresist is removed.

Note that the third interlayer insulating film 217 may be formed asnecessary. In a case of not forming the third interlayer insulating film217, after the second interlayer insulating film 216 is formed, thefirst interlayer insulating film, the second interlayer insulating film216, and the gate insulating film 213 are selectively etched to formcontact holes.

Then, after a metal stacked film is formed by a sputtering method, amask made of resist is formed, and then, the metal film is selectivelyetched to form a wiring 284, a connection electrode 285, a terminalelectrode 281, source or drain electrodes 282 of the TFT 304, and sourceor drain electrodes 283 of the TFT 305 (see FIG. 10B).

In FIG. 10B, the wiring 284, the connection electrode. 285, the terminalelectrode 281, the source or drain electrodes 282 of the TFT 304, andthe source or drain electrodes 283 of the TFT 305 are each formed of asingle-layer conductive film.

As such a single-layer film, a titanium film (Ti film) is preferable interms of heat resistance, conductivity, and the like. Instead of thetitanium film, a single-layer film formed of an element of tungsten (W),tantalum (Ta), molybdenum (Mo), neodymium (Nd), cobalt (Co), zirconium(Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium(Os), iridium (Ir), and platinum (Pt) or an alloy material or a compoundmaterial containing the element as its main component; or a single-layerfilm formed of a nitride thereof, for example, titanium nitride,tungsten nitride, tantalum nitride, or molybdenum nitride can be used.The number of deposition can be reduced in the manufacturing process byformation of the following components into a single-layer film: thewiring 284, the connection electrode 285, the terminal electrode 281,the source or drain electrodes 282 of the TFT 304, and the source ordrain electrodes 283 of the TFT 305.

In addition, FIG. 10C shows a case where a wiring 219, a connectionelectrode 220, a terminal electrode 251, source or drain electrodes 241of the TFT 304, and source or drain electrodes 242 of the TFT 305 areeach provided with a protective electrode.

First, lower conductive films of the wiring 219, the connectionelectrode 220, the terminal electrode 251, the source or drainelectrodes 241 of the TFT 304, and the source or drain electrodes 242 ofthe TFT 305 each have a stacked-layer structure of a refractory metalfilm and a low-resistance metal film (an aluminum alloy, pure aluminum,or the like). Here, the lower conductive film of the wiring 219, and thesource or drain electrodes 241 and 242 each have a three-layer structurewhere a titanium film (Ti film), an aluminum film (Al film), and a Tifilm are sequentially stacked.

Further, protective electrodes 218, 245, 248, 246, and 247 are formed soas to cover the wiring 219, the connection electrode 220, the terminalelectrode 251, the source or drain electrodes 241 of the TFT 304, andthe source or drain electrodes 242 of the TFT 305, respectively.

In etching a photoelectric conversion layer 303, the wiring 219 isprotected by the protective electrode 218 covering the wiring 219. Amaterial for the protective electrode 218 is preferably a conductivematerial of which etching rate is lower than that of the photoelectricconversion layer 303 with respect to an etching gas (or an etchant) usedfor etching the photoelectric conversion layer 303. Additionally, amaterial for the protective electrode 218 is preferably a conductivematerial that does not react with the photoelectric conversion layer 303to be an alloy. The other protective electrodes 245, 248, 246, and 247are each also formed of a material and in a manufacturing processsimilar to those of the protective electrode 218.

For example, a conductive metal film (such as titanium (Ti) ormolybdenum (Mo)) is formed, which is unlikely to be an alloy by beingreacted with a photoelectric conversion layer (typically, amorphoussilicon) which will be subsequently formed. Thereafter, a mask made ofresist is formed and the conductive metal film is selectively etched sothat the protective electrode 218 covering the wiring 284 is formed.Here, a Ti film with a thickness of 200 nm that can be obtained by asputtering method is used. Note that the connection electrode 285, theterminal electrode 281, the source or drain electrodes 282 of the TFT304, and the source or drain electrodes 283 of the TFT 305 are coveredwith the conductive metal film as well, and the protective electrodes245, 248, 246, and 247 are formed. Thus, the conductive metal filmcovers also the side faces where the second-layer Al films of theseelectrodes are exposed; therefore, the conductive metal film can preventan aluminum atom from dispersing into the photoelectric conversionlayer.

Next, a photoelectric conversion layer 303 including a p-typesemiconductor layer 303 p, an i-type semiconductor layer 303 i, and ann-type semiconductor layer 303 n is formed over the third interlayerinsulating film 217.

As for the p-type semiconductor layer 303 p, an amorphous silicon filmcontaining an impurity element belonging to Group 13, for example, boron(B) may be formed by a plasma CVD method.

In FIG. 11A, the wiring 284 is in contact with the lowest layer of thephotoelectric conversion layer 303, which is the p-type semiconductorlayer 303 p in this embodiment mode.

In the case of forming the protective electrodes, the wiring 284 and theprotective electrode 218 are in contact with the lowest layer of thephotoelectric conversion layer 303, in this embodiment mode, the p-typesemiconductor layer 303 p.

After the p-type semiconductor layer 303 p is formed, further, thei-type semiconductor layer 303 i and the n-type semiconductor layer 303n are sequentially formed. Accordingly, the photoelectric conversionlayer 303 including the p-type semiconductor layer 303 p, the i-typesemiconductor layer 303 i, and the n-type semiconductor layer 303 n isformed.

As for the i-type semiconductor layer 303 i, an amorphous silicon filmmay be formed by a plasma CVD method, for example. As for the n-typesemiconductor layer 303 n, an amorphous silicon film containing animpurity element belonging to Group 15, for example, phosphorus (P) mayalso be formed, or after an amorphous silicon film is formed, animpurity element belonging to Group 15 may also be introduced.

In addition, as for the p-type semiconductor layer 303 p, the i-typesemiconductor layer 303 i, and the n-type semiconductor layer 303 n, asemi-amorphous semiconductor film may also be used as well as theamorphous semiconductor film.

Next, a sealing layer 224 formed of an insulator material (for example,an inorganic insulating film containing silicon) is formed to have athickness of 1 to 30 μm over the entire surface, and a state of FIG. 11Ais obtained. Here, a silicon oxide film containing nitrogen with athickness of 1 μm is formed by a CVD method as the insulator materialfilm. The adhesiveness can be improved with the use of the insulatingfilm formed by a CVD method.

Then, after the sealing layer 224 is etched to provide an opening, theterminal electrode 221 and the terminal electrode 222 are formed by asputtering method. The terminal electrode 221 and the terminal electrode222 are formed of a stacked-layer film of a titanium film (Ti film, 100nm), a nickel film (Ni film, 300 nm), and a gold film (Au film, 50 nm).The fixing intensity of the terminal electrode 221 and the terminalelectrode 222 obtained as described above is more than 5N, which issufficient fixing intensity for a terminal electrode.

In the above steps, the terminal electrode 221 and the terminalelectrode 222 that can be connected with solder are formed, and astructure shown in FIG. 11B is obtained.

Next, the obtained photo sensor is mounted on the mounting side of thesubstrate 260. The solder 264 and the solder 263 are used for connectingthe terminal electrode 221 to the electrode 261, and the terminalelectrode 222 to the electrode 262, respectively. The solder is formedin advance by a screen printing method or the like over the electrodes261 and 262 of the substrate 260, and the solder and the terminalelectrode are made in an abutted state to perform mounting by a reflowsoldering treatment. The reflow soldering treatment is performed, forexample, at a temperature of approximately 255 to 265° C. for about 10seconds in an inert gas atmosphere. Moreover, as well as the solder, abump formed of metal (such as gold or silver), a bump formed of aconductive resin, or the like can be used. Further, lead-free solder mayalso be used for mounting in consideration of an environmental problem.

As described above, it is possible to obtain a semiconductor devicehaving a photoelectric conversion device including the photoelectricconversion layer 303, and the current mirror circuit 301.

Next, a structure and operation of the semiconductor device 201 of thisembodiment mode capable of wireless communication is described withreference to FIGS. 6, 12, and 13.

First, the structure is described. As shown in FIG. 6, a semiconductordevice (also referred to as an RFID, an ID chip, an IC chip, an IC tag,an ID tag, or a wireless chip) 201 of the present invention capable ofwireless communication includes circuit blocks of an antenna 917, ahigh-frequency circuit 914, a power supply circuit 915, a reset circuit911, a rectifier circuit 906, a demodulation circuit 907, an analogamplifier 908, a clock generation circuit 903, a modulation circuit 909,a signal output control circuit 901, a CRC (Cyclic Redundancy Code)circuit 902, and a memory circuit 900. The power supply circuit 915includes circuit blocks of a rectifier circuit 913 and a storagecapacitor 912. Further, as shown in FIG. 12, the memory circuit 900includes a memory cell array 920, a column decoder 921, and a rowdecoder 922.

As the antenna 917, any of a dipole antenna, a patch antenna, a loopantenna, and a Yagi antenna can be used.

In addition, as a method for transmitting and receiving a wirelesssignal in the antenna 917, any of an electromagnetic coupling method, anelectromagnetic induction method, and an electromagnetic wave method maybe used.

Next, the operation of the semiconductor device 201 of the presentinvention capable of wireless communication is described. As shown inFIG. 13, a wireless signal is transmitted from an antenna unit 342 whichis electrically connected to an interrogator (also referred to as areader/writer) 343. The wireless signal includes an instruction from theinterrogator (also referred to as a reader/writer) 343 to thesemiconductor device 201 capable of wireless communication.

The wireless signal received by the antenna 917 is transmitted to eachcircuit block via the high-frequency circuit 914. The signal transmittedto the power supply circuit 915 via the high-frequency circuit 914 isinput to the rectifier circuit 913.

Here, the rectifier circuit acts to rectify a polarity of the wirelesssignal. The signal is rectified and then smoothed by the storagecapacitor. Then, a high power supply potential (VDD) is generated.

The wireless signal received by the antenna 917 is also transmitted tothe rectifier circuit 906 via the high-frequency circuit 914. The signalis rectified and then demodulated by the demodulation circuit 907. Thedemodulated signal is amplified by the analog amplifier 908.

Further, the wireless signal received by the antenna 917 is alsotransmitted to the clock generation circuit 903 via the high-frequencycircuit 914. The signal transmitted to the clock generation circuit 903is frequency-divided to be a reference clock signal. Here, the referenceclock signal is transmitted to each circuit block and used for latchinga signal, selecting a signal, and the like.

The signal amplified by the analog amplifier 908 and the reference clocksignal are transmitted to a code extraction circuit 904. In the codeextraction circuit 904, an instruction transmitted from the interrogator343 to the semiconductor device 201 capable of wireless communication isextracted from the signal amplified by the analog amplifier 908. Thecode extraction circuit 904 also forms a signal for controlling a codeidentification circuit 905.

The instruction extracted by the code extraction circuit 904 istransmitted to the code identification circuit 905. The codeidentification circuit 905 identifies the instruction transmitted fromthe interrogator 343. The code identification circuit 905 also has arole of controlling the CRC circuit 902, the memory circuit 900, and thesignal output control circuit 901.

In this manner, the instruction transmitted from the interrogator (alsoreferred to as a reader/writer) 343 is identified, and the CRC circuit902, the memory circuit 900, and the signal output control circuit 901are operated in accordance with the identified instruction. In addition,a signal including data which is stored in or written to the memorycircuit 900, is output.

The memory circuit 900 includes data that is stored in advance, and datafrom the photo sensor 202 is written. The data that is stored in advancemay be data or the like such as a serial number for examination orpersonal information of a patient. The data from the photo sensor 202may be data of analytically processing change and degree of color of thereagent portion 108 that is described below.

The memory circuit 900 includes the memory cell array 920, the columndecoder 921, and the row decoder 922.

The signal output control circuit 901 has a role of converting thesignal including the data which is stored in or written to the memorycircuit 900 into a signal encoded by an encoding method to which astandard of the ISO or the like is applied.

Lastly, in accordance with the encoded signal, the signal transmitted tothe antenna 917 is modulated by the modulation circuit 909.

The modulated signal is received by the antenna unit 342 which iselectrically connected to the interrogator 343. Then, the receivedsignal is analyzed by the interrogator 343, and the data of thesemiconductor device 201 of the present invention capable of wirelesscommunication can be recognized.

In a wireless communication system using the semiconductor device 201capable of wireless communication that uses an IC, formed using thepresent invention, the semiconductor device 201 capable of wirelesscommunication, the interrogator 343 having a known structure, an antennaelectrically connected to the interrogator, and a control terminal forcontrolling the interrogator can be used. A communication method of thesemiconductor device 201 capable of wireless communication and theantenna electrically connected to the interrogator is one-waycommunication or two-way communication, and any of a space divisionmultiplexing method, a polarization division multiplexing method, afrequency-division multiplexing method, a time-division multiplexingmethod, a code division multiplexing method, and an orthogonal frequencydivision multiplexing method can also be used.

The wireless signal is a signal in which a carrier wave is modulated.Modulation of a carrier wave is an analog modulation or a digitalmodulation, which may be any of an amplitude modulation, a phasemodulation, a frequency modulation, and spread spectrum.

As for a frequency of a carrier wave, any of the following can beemployed: a submillimeter wave of greater than or equal to 300 GHz andless than or equal to 3 THz; an extra high frequency of greater than orequal to 30 GHz and less than 300 GHz; a super high frequency of greaterthan or equal to 3 GHz and less than 30 GHz; an ultra high frequency ofgreater than or equal to 300 MHz and less than 3 GHz; a very highfrequency of greater than or equal to 30 MHz and less than 300 MHz; ahigh frequency of greater than or equal to 3 MHz and less than 30 MHz; amedium frequency of greater than or equal to 300 kHz and less than 3MHz; a low frequency of greater than or equal to 30 kHz and less than300 kHz; and a very low frequency of greater than or equal to 3 kHz andless than 30 kHz.

Also, as shown in FIGS. 2B and 3B, the chip 105 of this embodiment modemay include the battery 204. The battery used in this embodiment mode isdescribed below with reference to FIGS. 14 to 20.

In this specification, a battery that includes an antenna; a circuitthat charges the battery with electromotive force that is generated byan electromagnetic wave received by the antenna; and a medium thatcharges the electromotive force is also called an RF battery or awireless battery.

Also, in this specification, a battery refers to a secondary battery oran accumulator battery, and refers to a device that changes electricalenergy obtained from an external power supply into chemical energy andstores the energy, and takes it out again as power as necessary. Inaddition, a capacitor refers to a device in which two conductors thatare insulated are near each other and one of the two conductors takes ona positive charge and the other takes on a negative charge, and chargeis store by an attracting force between electricity thereof.

Note that “battery” in this specification means a secondary batterywhose continuous operating time can be restored by charging. Further, asa battery, a battery formed in a sheet-like form with a thin thicknessor a battery formed in a cylindrical shape with a small diameter ispreferably used although the type of the battery may differ depending onthe intended use of the battery. For example, by using a lithiumbattery, preferably a lithium polymer battery that uses a gelelectrolyte, a lithium ion battery, or the like, miniaturization ispossible. Needless to say, any battery may be used as long as it ischargeable. For example, the following batteries that are chargeable anddischargeable can be used: a nickel metal hydride battery, a nickelcadmium-battery, an organic radical battery, a lead-acid battery, an airsecondary battery, a nickel-zinc battery, a silver-zinc battery, or thelike. Alternatively, a high-capacity capacitor or the like may be used.

Note that as a high-capacity capacitor that can be used as a battery ofthis embodiment mode it is preferable to use a capacitor havingelectrodes whose opposed areas are large. In particular, it ispreferable to use an electric double layer capacitor which is formedusing an electrode material having a large specific surface area such asactivated carbon, fullerene, or a carbon nanotube. A capacitor has asimpler structure than a battery and can be easily formed to be thin andformed by stacking layers. An electric double layer capacitor has afunction of storing electric power and does not deteriorate much evenafter it is charged and discharged a number of times. Further, theelectric double layer capacitor has an excellent property that it can becharged rapidly.

In FIG. 14, an internal antenna circuit 411 receives a wireless signalgenerated by an external antenna circuit 415. The signal received by theinternal antenna circuit 411 is input to a rectifier circuit 412 to beconverted into a direct current. A charge circuit 413 generates currentbased on power from the rectifier circuit 412, and charges a battery407. A charge control circuit 414 monitors so that the battery 407 isnot overcharged, and controls the charge circuit 413 when an amount ofcharge increases in order to suppress the amount of charge. Note thatthe charge circuit 413 can be composed of, for example, a voltagecontrol circuit (also called a “regulator”) and a switch circuit. Notethat by having a diode as the switch circuit, the charge control circuitdoes not have to be provided. In addition, the voltage control circuitmay be a voltage and current control circuit or a constant currentsource circuit.

Note that as the internal antenna circuit 411 and the external antennacircuit 415, the antenna 501 and the antenna circuit 503 composed of aresonant capacitor 502 shown in FIG. 15A can be used, respectively, forexample. Further, it is acceptable as long as the rectifier circuit 412is a circuit that converts an alternate current signal induced byelectromagnetic waves received by the internal antenna circuit 411 andthe external antenna circuit 415, into a direct current signal. Forexample, as shown in FIG. 15B, the rectifier circuit 412 can be composedof a diode 504, a diode 505, and a smoothing capacitor 506.

In this embodiment mode, a frequency of a wireless signal received bythe internal antenna circuit 411 may be, for example, 125 kHz, 13.56MHz, 915 MHz, 2.45 GHz, or the like. However, the frequency of thesignal received by the internal antenna circuit is not limited to those,and for example, any of the following can be employed: a submillimeterwave of greater than or equal to 300 GHz and less than or equal to 3THz; an extra high frequency of greater than or equal to 30 GHz and lessthan 300 GHz; a super high frequency of greater than or equal to 3 GHzand less than 30 GHz; an ultra high frequency of greater than or equalto 300 MHz and less than 3 GHz; a very high frequency of greater than orequal to 30 MHz and less than 300 MHz; a high frequency of greater thanor equal to 3 MHz and less than 30 MHz; a medium frequency of greaterthan or equal to 300 KHz and less than 3 MHz; a low frequency of greaterthan or equal to 30 KHz and less than 300 KHz; and a very low frequencyof greater than or equal to 3 KHz and less than 30 KHz.

Further, a signal transmitted or received between the internal antennacircuit 411 and the external antenna circuit 415 is a modulated carrierwave. As a method of modulating the carrier wave, analog modulation ordigital modulation may be used. Amplitude modulation, phase modulation,frequency modulation, or spread spectrum may also be used. Preferably,amplitude modulation or frequency modulation is used. For example, asthe wireless signal, electric waves that are unintentionally receivedfrom the outside such as electric waves of relay stations of cellularphones (e.g., 800 to 900 MHz, 1.5 GHz, or 1.9 to 2.1 GHz), electricwaves emitted from cellular phones, electric waves of wave clocks (e.g.,40 kHz), noise of a household AC power supply (e.g., 60 Hz), or the likecan also be utilized. Further, by provision of a plurality of antennacircuits each of which uses an antenna with different length and shapeas the internal antenna circuit 411, various wireless signals can beutilized for charging the battery 407.

The length and shape of the antenna provided in the internal antennacircuit 411 and the external antenna circuit 415 are decided so as toeasily receive these wireless signals. Further, in the case of receivinga plurality of these electric waves, it is preferable to provide aplurality of antenna circuits each of which includes an antenna withdifferent length and shape.

The shape of the antenna provided in the internal antenna circuit 411 orthe external antenna circuit 415 is not particularly limited. That is,as a transmission system of a signal that is applied to the internalantenna circuit 411 or the external antenna circuit 415, anelectromagnetic coupling system, an electromagnetic induction system, amicro-wave system, or the like can be used. The transmission system maybe selected appropriately by a practitioner in consideration of usage,and an antenna having an optimal length and shape may be provided inaccordance with the transmission system.

In the case of employing, for example, an electromagnetic couplingsystem or an electromagnetic induction system (e.g., 13.56 MHz band) asthe transmission system, electromagnetic induction caused by a change inelectric field density is used. Therefore, the conductive film whichfunctions as an antenna is formed in an annular shape (e.g., a loopantenna) or a spiral shape (e.g., a spiral antenna or a helicalantenna).

A micro-wave system (e.g., UHF band (860 to 960 MHz band), a 2.45 GHzband, or the like) can be used as the transmission system. In that case,the length and shape of the conductive film which functions as anantenna may be appropriately set in consideration of the wavelength ofan electric wave used for signal transmission. For example, a conductivefilm which functions as an antenna can be formed in a linear shape(e.g., a dipole antenna), a flat shape (e.g., a patch antenna), or thelike. The shape of the conductive film which functions as the antenna isnot limited to a linear shape, and a curved-line shape, a meander shape,or a combination thereof may be employed in consideration of thewavelength of an electromagnetic wave.

Here, examples of the shape of the antenna provided in the internalantenna circuit 411 or the external antenna circuit 415 are shown inFIGS. 16A to 16E. For example, as shown in FIG. 16A, a structure inwhich an antenna 523, which is sheet-shaped, is provided around acircuit element 522 over which a variety of circuits or the like isprovided may be used. Note that the circuit element 522 refers to eachelement of the semiconductor device 201 capable of wirelesscommunication from which the internal antenna circuit 411 or theexternal antenna circuit 415 is removed.

In addition, as shown in FIG. 16B, a structure in which the antenna 523,which is thin, is provided around the circuit element 522 over which avariety of circuits or the like are provided may be used. Further, asshown in FIG. 16C, the shape of the antenna 523 for receiving a highfrequency electromagnetic wave may be used and provided for the circuitelement 522 over which a variety of circuits or the like are provided.In addition, as shown in FIG. 16D, the antenna 523, which is 180 degreeomnidirectional (capable of receiving signals equally from anydirection), may be provided for the circuit element 522 over which avariety of circuits or the like are provided. In addition, as shown inFIG. 16E, the antenna 523 which is extended to have a stick shape may beprovided for the circuit element 522 over which a variety of circuits orthe like are provided. The internal antenna circuit 411 or the externalantenna circuit 415 can be formed by a combination of antennas withthese shapes.

In FIGS. 16A to 16E, there is no particular limitation on the connectionbetween the circuit element 522 over which a variety of circuits or thelike are provided and the antenna. For example, the antenna 523 and thecircuit element 522 over which circuits or the like are provided may beconnected by wire bonding or bump bonding. Alternatively, an electrodeformed in a portion of the circuit element 522 over which circuits orthe like are provided may be attached to the antenna 523; in thismethod, an ACF (anisotropic conductive film) can be used for attachingthe circuit element 522 to the antenna 523. An appropriate length of theantenna 523 varies depending on a frequency for receiving signals.Therefore, the length is generally a fraction of a whole number of thewavelength, for example, when the frequency is 2.45 GHz, the length ofthe antenna may be about 60 mm (a half wavelength), or about 30 mm (aquarter wavelength).

The internal antenna circuit 411 may have a multiband antenna structure,by which electromagnetic waves in a plurality of frequency bands can bereceived. For example, as shown in FIG. 17, the internal antenna circuitmay be formed of a plurality of antenna circuits. In the structure shownin FIG. 17, a first antenna circuit 1705 a, a second antenna circuit1705 b, a third antenna circuit 1705 c, a circuit element 1702 includinga control circuit, and a battery 1703 are provided over a substrate1701. Note that the first antenna circuit 1705 a, the second antennacircuit 1705 b, and the third antenna circuit 1705 c are electricallyconnected to the control circuit provided in the circuit element 1702.Reference numeral 1706 denotes a transmitter which transmits anelectromagnetic wave for charging the battery and is provided in adisplay portion or the like.

The electric waves received by the first antenna circuit 1705 a, thesecond antenna circuit 1705 b, and the third antenna circuit 1705 c areinput to the battery 1703 through a rectification circuit in the controlcircuit formed in the circuit element 1702, thereby charging the battery1703.

Here, an example where the electric wave transmitted from thetransmitter 1706 is received by the first antenna circuit 1705 a and anexternal wireless signal 1707 is received by the second antenna circuit1705 b and the third antenna circuit 1705 c is shown. Further, arelation of connection among the first antenna circuit 1705 a, thesecond antenna circuit 1705 b, and the third antenna circuit 1705 c isnot particularly limited. For example, all antennas may be electricallyconnected, or alternatively antennas may be provided independentlywithout being electrically connected to each other.

The lengths and shapes of the first antenna circuit 1705 a, the secondantenna circuit 1705 b, and the third antenna circuit 1705 c used forcharging the battery 1703 are not limited to those shown in FIG. 17.Here, an example is shown, in which linear antennas having differentlengths (dipole antennas) are provided as antennas of the second antennacircuit 1705 b and the third antenna circuit 1705 c. Alternatively, forexample, a combination of a dipole antenna and a coiled antenna or acombination of a dipole antenna and a patch antenna may be used. Thus, aplurality of antennas having different lengths and shapes can beprovided as the antennas used for charging the battery 1703, wherebyvarious wireless signals can be received. Accordingly, chargingefficiency can be improved. In particular, when a combination ofantennas having different shapes such as a combination of a patchantenna and a dipole antenna is provided (for example, a folded dipoleantenna is provided around a patch antenna), it becomes possible toutilize a limited space efficiently. The example of providing threeantenna circuits of the first antenna circuit 1705 a, the second antennacircuit 1705 b, and the third antenna circuit 1705 c in the electronicpen is shown in this embodiment mode; however, the present invention isnot limited to this. A structure where one antenna circuit, or three ormore antenna circuits is/are provided may be employed.

For example, the frequency of signals transmitted and received betweenthe first antenna circuit 1705 a and the transmitter 1706 may be 125kHz, 13.56 MHz, 915 MHz, 2.45 GHz, or the like, to each of which astandard of the ISO is applied. However, the frequency of the signalstransmitted and received between the first antenna circuit 1705 a andthe transmitter 1706 is not limited to this, and for example, any of thefollowing can be employed: a submillimeter wave of greater than or equalto 300 GHz and less than or equal to 3 THz; an extra high frequency ofgreater than or equal to 30 GHz and less than 300 GHz; a super highfrequency of greater than or equal to 3 GHz and less than 30 GHz; anultra high frequency of greater than or equal to 300 MHz and less than 3GHz; a very high frequency of greater than or equal to 30 MHz and lessthan 300 MHz; a high frequency of greater than or equal to 3 MHz andless than 30 MHz; a medium frequency of greater than or equal to 300 KHzand less than 3 MHz; a low frequency of greater than or equal to 30 KHzand less than 300 KHz; and a very low frequency of greater than or equalto 3 KHz and less than 30 KHz. The signal transmitted and receivedbetween the first antenna circuit 1705 a and the transmitter 1706 is amodulated carrier wave. As a method of modulating the carrier wave,analog modulation or digital modulation may be used: amplitudemodulation, phase modulation, frequency modulation, or spread spectrummay also be used. Preferably, amplitude modulation or frequencymodulation is used.

As the external wireless signal 1707 received by the antennas of thesecond antenna circuit 1705 b and the third antenna circuit 1705 c,electric waves of relay stations of cellular phones (e.g., 800 to 900MHz, 1.5 GHz, or 1.9 to 2.1 GHz), electric waves emitted from cellularphones, electric waves of wave clocks (e.g., 40 kHz), noise of ahousehold AC power supply (e.g., 60 Hz), electric waves generatedunintentionally from other readers/writers, or the like can also beutilized. When the battery is charged wirelessly by reception ofexternal wireless signals, a battery charger or the like for chargingthe battery is not needed additionally; accordingly, the electronic pencan be manufactured at reduced cost. Further, by provision of aplurality of antenna circuits each of which uses an antenna withdifferent length and shape as shown in FIG. 17, various wireless signalscan be utilized for charging the battery 1703. The lengths and shapes ofthe antennas provided in the second antenna circuit 1705 b and the thirdantenna circuit 1705 c are preferably decided so as to easily receivethese wireless signals. Further, the mode where the first antennacircuit receives the electromagnetic wave from the transmitter 1706 isused in FIG. 17; however, the present invention is not limited to thisand a mode where all antenna circuits receive external wireless signalsfor charging the battery may be employed.

The example of providing the plurality of antenna circuits 1705 a, 1705b, and 1705 c, the circuit element 1702, and the battery 1703 over theone substrate 1701 is shown in FIG. 17; however, the present inventionis not limited to the structure shown in FIG. 17, and each of them maybe provided over separate substrates.

Next, a structural example of a thin-film battery is described as thebattery 407 shown in FIG. 14. In this embodiment mode, a structuralexample of a battery in the case of using a lithium ion battery is shownin FIG. 18.

FIG. 18 is a cross-sectional schematic view of a thin-film battery. Acurrent-collecting thin film 7102 to serve as an electrode is formedover a substrate 7101. The current-collecting thin film 7102 is requiredto have high adhesion to a negative electrode active material layer 7103and also have low resistance. For example, aluminum, copper, nickel,vanadium, or the like can be used. Next, the negative electrode activematerial layer 7103 is formed over the current-collecting thin film7102. Generally, vanadium oxide (V₂O₅) or the like is used. Next, asolid electrolyte layer 7104 is formed over the negative electrodeactive material layer 7103. Generally, lithium phosphate (Li₃PO₄) or thelike is used. Then, a positive electrode active material layer 7105 isformed over the solid electrolyte layer 7104. Generally, lithiummanganate (LiMn₂O₄) or the like is used. Lithium cobaltate (LiCoO₂) orlithium nickel oxide (LiNiO₂) can also be used. Next, acurrent-collecting thin film 7106 to serve as an electrode is formedover the positive electrode active material layer 7105. Thecurrent-collecting thin film 7106 is required to have high adhesion tothe positive electrode active material layer 7105 and also have lowresistance. For example, aluminum, copper, nickel, vanadium, or the likecan be used. Note that compared to a nickel-cadmium battery, a lead-acidbattery, or the like, the lithium ion battery causes less memory effectand have a larger amount of current.

Each of the above thin layers of the current-collecting thin film 7102,the negative electrode active material layer 7103, the solid electrolytelayer 7104, the positive electrode active material layer 7105, and thecurrent-collecting thin film 7106 may be formed by using a sputteringtechnique or a vapor-deposition technique. In addition, each thicknessof the current-collecting thin film 7102, the negative electrode activematerial layer 7103, the solid electrolyte layer 7104, the positiveelectrode active material layer 7105, and the current-collecting thinfilm 7106 is preferably 0.1 to 3 μm.

Next, the operation in charging and discharging the battery will bedescribed. In charging the battery, lithium ions are desorbed from apositive electrode active material. Then, the lithium ions are absorbedinto a negative electrode active material through the solid electrolytelayer. At this time, electrons are released to the outside from thepositive electrode active material.

In discharging the battery, on the other hand, lithium ions are desorbedfrom the negative electrode active material. Then, the lithium ions areabsorbed into the positive electrode active material through the solidelectrolyte layer. At this time, electrons are released to the outsidefrom the negative electrode active material layer. The thin-filmsecondary battery operates in this manner.

Note that it is preferable to stack another set of thin layers of thecurrent-collecting thin film 7102, the negative electrode activematerial layer 7103, the solid electrolyte layer 7104, the positiveelectrode active material layer 7105, and the current-collecting thinfilm 7106, because larger electric power can be charged in or dischargedfrom the battery with such a structure.

The battery in this embodiment mode is a thin film with a thickness ofabout 10 μm or less and capable of charging and discharging. Therefore,when the battery of this embodiment mode is used, a small andlight-weight examination element can be manufactured.

When using a chargeable battery, it is generally necessary to controlcharging and discharging of the battery. It is necessary to conductcharging while monitoring the charge state of a battery in order toprevent overcharging. A circuit for charge control will be described inthis embodiment mode. FIG. 19 is a block diagram of the charge circuit413, the charge control circuit 414, and the battery 407 shown in FIG.14.

In the example shown in FIG. 19, the charge circuit 413 includes aconstant current source circuit 425 and a switch circuit 426, and isconnected to the charge control circuit 414 and the battery 407. Thecharge circuit shown in FIG. 19 is only an example, and the invention isnot limited to this structure. A different structure may be employed.Although the battery 407 is charged with a constant current in thisembodiment mode, a power supply may be switched from a constant currentat a certain point so that the battery can be charged with a constantvoltage. In addition, another method without using a constant currentmay also be employed. Further, transistors included in the circuitswhich will be described below may be any of thin film transistors,transistors on a single-crystalline substrate, or organic transistors.

FIG. 20 is a detailed diagram of the circuit shown in FIG. 19. Theoperation of the circuit will be described below. The constant currentsource circuit 425, the switch circuit 426, and the charge controlcircuit 414 use a high potential power supply line 776 and a lowpotential power supply line 777 as power supply lines. In FIG. 19, thelow potential power supply line 777 is used as a GND line. However, thepotential of the low potential power supply line 777 is not limited tothe GND, and may have a different potential.

The constant current source circuit 425 includes transistors 752 to 761and resistors 751 and 762. A current flows into the transistors 752 and753 from the high potential power supply line 776 through the resistor751, so that the transistors 752 and 753 are turned ON.

The transistors 754, 755, 756, 757, and 758 constitute a feedbackdifferential amplifier, and the gate potential of the transistor 757 isalmost the same as the gate potential of the transistor 752. The draincurrent of the transistor 761 has a value obtained by dividing apotential difference between the gate potential of the transistor 757and the potential of the low potential power supply line 777 by theresistance value of the resistor 762. The drain current is input intothe current mirror circuit which is constructed from the transistors 759and 760, and an output current of the current mirror circuit is suppliedto the switch circuit 426. The constant current source circuit 425 isnot limited to this structure and a different structure may be used.

The switch circuit 426 includes a transmission gate 765 and inverters763 and 764. The input signal of the inverter 764 controls whether tosupply a current to the battery 407 from the constant current sourcecircuit 425. The switch circuit is not limited to this structure and adifferent structure may be used.

The charge control circuit 414 includes transistors 766 to 774 and aresistor 775. A current flows into the transistors 773 and 774 from thehigh potential power supply line 776 through the resistor 775, so thatthe transistors 773 and 774 are turned ON. The transistors 768, 769,770, 771, and 772 constitute a differential comparator. When the gatepotential of the transistor 770 is lower than the gate potential of thetransistor 771, the drain potential of the transistor 768 has almost thesame value as the potential of the high potential power supply line 776,whereas when the gate potential of the transistor 770 is higher than thegate potential of the transistor 771, the drain potential of thetransistor 768 has almost the same value as the source potential of thetransistor 770.

When the drain potential of the transistor 768 has almost the same valueas the potential of the high potential power supply line, the chargeamount control circuit outputs a low-level potential through a bufferwhich is constituted from the transistors 767 and 766. When the drainpotential of the transistor 768 has almost the same value as the sourcepotential of the transistor 770, the charge amount control circuitoutputs a high-level potential through the buffer which is constitutedfrom the transistors 767 and 766.

When the output of the charge control circuit 414 is low, a current issupplied to the battery 407 through the switch circuit 426. Meanwhile,when the output of the charge control circuit 414 is high, the switchcircuit 426 is turned OFF and no current is supplied to the battery 407.A gate of the transistor 770 is connected to the battery 407; therefore,when the battery 407 is charged and the potential of the batterysurpasses the threshold voltage of the comparator of the charge controlcircuit 414, charging is stopped. Although the threshold voltage of thecomparator in this embodiment mode is set at the gate potential of thetransistor 773, the potential is not limited to this value, and adifferent potential may be set. The set potential is generallydetermined in accordance with the intended use of the device and theperformance of the battery. The structure of the charge circuit for thebattery is not limited to this structure.

The photo sensor 202, the semiconductor device 201 capable of wirelesscommunication, and the battery 204 formed in the chip 105 shown in FIG.1B are formed in the foregoing manner.

As shown in FIG. 1B, when the hygroscopic portion 109 is dipped inurine, the urine reaches the reagent portion 108. Thereafter, the LED104 or the LED 203 is made to emit light, a change in color or thecolored degree of the reagent portion 108 is detected by the photosensor 202 and stored in the semiconductor device 201 capable ofwireless communication, and an analysis process is performed in acircuit mounted to the semiconductor device 201 capable of wirelesscommunication. Subsequently, examination data that is analyticallyprocessed is transmitted to an external database 345 or the like via theinterrogator 343 by the antenna 103. Then, the examination data isstored in the database 345.

The antenna 103 may be electrically connected to each of the antenna917, the internal antenna circuit 411, and the external antenna circuit415. Alternatively, the antenna 103 may double as any one or a pluralityof the antenna 917, the internal antenna circuit 411, and the externalantenna circuit 415.

The examination element 101 of this embodiment mode is attached to aninside (a side portion or a bottom portion) of a paper cup forurinalysis, as described above. Accordingly, chip size is not limited aslong as it is within a range that does not exceed the size of the cup.

In addition, the examination element 101 can be reused by providing anattachment portion around the reagent portion 108 and the hygroscopicportion 109 to make them detachable.

This application is based on Japanese Patent Application serial no.2006-247978 filed in Japan Patent Office on Sep. 13 in 2006, the entirecontents of which are hereby incorporated by reference.

1. An examination element comprising: a reagent portion configured to bein contact with a liquid; a sensor configured to detect a change of thereagent portion; and a semiconductor device capable of wirelesscommunication, the semiconductor device being configured to receive adata from the sensor and transmit the data to an external database,wherein the reagent portion, the sensor and the semiconductor device areformed over a same substrate.
 2. The examination element according toclaim 1, wherein the sensor comprises a photo diode and an amplifiercircuit configured to amplify an output current of the photo diode. 3.The examination element according to claim 1, wherein the semiconductordevice includes a memory circuit configured to store the data.
 4. Theexamination element according to claim 1, further comprising a batteryconfigured to supply power.
 5. The examination element according toclaim 1, further comprising a light emitting element.
 6. The examinationelement according to claim 1, further comprising a hygroscopic portionin contact with the reagent portion.
 7. The examination elementaccording to claim 1, further comprising an antenna.
 8. The examinationelement according to claim 1, wherein the examination element is usedfor urinalysis.
 9. An examination element comprising: a reagent portionconfigured to be in contact with a liquid; a sensor configured to detecta change of the reagent portion, the sensor comprising a thin filmtransistor formed over a substrate; and a semiconductor device capableof wireless communication, the semiconductor device being configured toreceive a data from the sensor and transmit the data to an externaldatabase, wherein the reagent portion and the semiconductor device areformed over the substrate.
 10. The examination element according toclaim 9, wherein the sensor comprises a photo diode and an amplifiercircuit configured to amplify an output current of the photo diode. 11.The examination element according to claim 9, wherein the semiconductordevice includes a memory circuit configured to store the data.
 12. Theexamination element according to claim 9, further comprising a batteryconfigured to supply power.
 13. The examination element according toclaim 9, further comprising a light emitting element.
 14. Theexamination element according to claim 9, further comprising ahygroscopic portion in contact with the reagent portion.
 15. Theexamination element according to claim 9, further comprising an antenna.16. The examination element according to claim 9, wherein theexamination element is used for urinalysis.
 17. An examination containercomprising: a container; and an examination element provided in thecontainer, the examination element comprising: a reagent portionconfigured to be in contact with a liquid; a sensor configured to detecta change of the reagent portion; and a semiconductor device capable ofwireless communication, the semiconductor device being configured toreceive a data from the sensor and transmit the data to an externaldatabase, wherein the reagent portion, the sensor and the semiconductordevice are formed over a same substrate.
 18. The examination containeraccording to claim 17, wherein the sensor comprises a photo diode and anamplifier circuit configured to amplify an output current of the photodiode.
 19. The examination container according to claim 17, wherein thesemiconductor device includes a memory circuit configured to store thedata.
 20. The examination container according to claim 17, furthercomprising a battery configured to supply power.
 21. The examinationcontainer according to claim 17, further comprising a light emittingelement.
 22. The examination container according to claim 17, furthercomprising a hygroscopic portion in contact with the reagent portion.23. The examination container according to claim 17, further comprisingan antenna.
 24. The examination container according to claim 17, whereinthe examination element is used for urinalysis.
 25. An examinationcontainer comprising: a container; and an examination element providedin the container, the examination element comprising: a reagent portionconfigured to be in contact with a liquid; a sensor configured to detecta change of the reagent portion, the sensor comprising a thin filmtransistor formed over a substrate; and a semiconductor device capableof wireless communication, the semiconductor device being configured toreceive a data from the sensor and transmit the data to an externaldatabase, wherein the reagent portion and the semiconductor device areformed over the substrate.
 26. The examination container according toclaim 25, wherein the sensor comprises a photo diode and an amplifiercircuit configured to amplify an output current of the photo diode. 27.The examination container according to claim 25, wherein thesemiconductor device includes a memory circuit configured to store thedata.
 28. The examination container according to claim 25, furthercomprising a battery configured to supply power.
 29. The examinationcontainer according to claim 25, further comprising a light emittingelement.
 30. The examination container according to claim 25, furthercomprising a hygroscopic portion in contact with the reagent portion.31. The examination container according to claim 25, further comprisingan antenna.
 32. The examination container according to claim 25, whereinthe examination element is used for urinalysis.